A Yield Model Incorporating Random and Systematic Yield Part I: Theory

Since the introduction of the negative binomial yield model and critical area analysis in the 1980s, a golden methodology for modeling, prediction, and analysis of "random" or particle induced yield is in place and has been successfully applied for decades. Unfortunately, this level of mat...

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Bibliographic Details
Published in2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference pp. 206 - 215
Main Author Melzner, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Analytical models
Implants
Lithography
Optical sensors
Predictive models
Probability
Semiconductor device manufacture
Temperature
Thermodynamics
Virtual manufacturing
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Summary:Since the introduction of the negative binomial yield model and critical area analysis in the 1980s, a golden methodology for modeling, prediction, and analysis of "random" or particle induced yield is in place and has been successfully applied for decades. Unfortunately, this level of maturity is not observed for modeling of "systematic" yield loss. In this paper, we will review and discuss the basics of a yield model that incorporates both "random" and "systematic" effects. Special focus will be on clarification of terms, underlying assumptions and corresponding limitations of the model. Part II of this paper is planned to be presented on a future ASMC conference. It will focus on practical application of the model in the field of lithography.
ISBN:1424419646
9781424419647
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2008.4529031