Cubic silicon carbide avalanche photodiodes

Silicon carbide avalanche photodiodes are receiving significant interest for detection of low levels of ultraviolet light. The primary limitation of 3C-SiC is the lack of a large-area, low-defect-density substrate. Nearly all reports of 3C devices have been either grown directly on Si or on wafers t...

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Bibliographic Details
Published in2009 International Semiconductor Device Research Symposium pp. 1 - 2
Main Authors Rowland, L.B., Wyatt, J.L., Bishop, S.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2009
Subjects
Avalanche photodiodes
Educational institutions
Gain measurement
P-i-n diodes
Robustness
Semiconductor device noise
Semiconductor diodes
Silicon carbide
Substrates
Wavelength measurement
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Summary:Silicon carbide avalanche photodiodes are receiving significant interest for detection of low levels of ultraviolet light. The primary limitation of 3C-SiC is the lack of a large-area, low-defect-density substrate. Nearly all reports of 3C devices have been either grown directly on Si or on wafers that were originally formed on Si. Given that there is a large lattice mismatch between 3C-SiC and Si, the device performance has typically been compromised or dominated by extended defects. There have been previous reports of pn junction 3C-SiC photodiodes operating at low bias grown on Si substrates which had peak wavelengths of 250-350 nm. In this work, we discuss 3C-SiC homojunction avalanche photodiodes grown on hexagonal SiC substrates.
ISBN:1424460301
9781424460304
DOI:10.1109/ISDRS.2009.5378159