Demonstration of 10.3-Gbit/s burst-mode CDR employing 0.13 um SiGe BiCMOS quad-rate sampling IC and data-phase decision-algorithm for 10Gbps-based PON systems

We present a new 10 Gbps-based PON burst-mode CDR with a 0.13 um BiCMOS quad-rate sampling IC and decision-algorithm for optimum recovery-data selection. Instantaneous burst-mode recovery of the first bit with a long 72-bit CID tolerance was successfully achieved.

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Bibliographic Details
Published in2008 34th European Conference on Optical Communication pp. 1 - 2
Main Authors Suzuki, N., Nakura, K., Ishikawa, M., Yoshima, S., Shirai, S., Kozaki, S., Tagami, H., Nogami, M., Takahashi, A., Nakagawa, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
BiCMOS integrated circuits
Clocks
Data mining
Germanium silicon alloys
Logic circuits
Passive optical networks
Physical layer
Sampling methods
Silicon germanium
Synchronization
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Summary:We present a new 10 Gbps-based PON burst-mode CDR with a 0.13 um BiCMOS quad-rate sampling IC and decision-algorithm for optimum recovery-data selection. Instantaneous burst-mode recovery of the first bit with a long 72-bit CID tolerance was successfully achieved.
ISBN:1424422272
9781424422272
ISSN:1550-381X
DOI:10.1109/ECOC.2008.4729526