Chip Improvements for Future IGBT Modules

Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGB...

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Bibliographic Details
Published in2008 IEEE Industry Applications Society Annual Meeting pp. 1 - 7
Main Authors Donlon, J.F., Motto, E.R., Takahashi, T., Fujii, H., Satoh, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Bipolar transistors
Buffer layers
Diodes
Energy loss
Insulated gate bipolar transistors
Noise reduction
Semiconductor device noise
Silicon
Surface resistance
Voltage
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Summary:Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought as close to their theoretical limit as possible. In this paper, fine pattern processing technology is applied along with optimization of the low impurity profile of the buffer layer using thin wafer technology to further reduce the power loss.
ISBN:9781424422784
1424422787
ISSN:0197-2618
2576-702X
DOI:10.1109/08IAS.2008.368