Assessment of heterojunction SiGe tunnel-FET for low-power digital circuits

To overcome the fundamental limitations of conventional MOSFETs, tunneling field effect transistors (TFETs) with strained-SiGe channel (via heterogeneous integration) may be used and is demonstrated using simulation. We mainly focus on the design and implementation of silicon germanium based tunnel...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 336 - 340
Main Authors Maiti, C. K., Dash, T. P., Das, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Heterogeneous Integration
Heterojunctions
Heterostructure Tunnel FET
Logic gates
Performance evaluation
Photonic band gap
Silicon germanium
strained-SiGe
TFETs
Tunneling
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Summary:To overcome the fundamental limitations of conventional MOSFETs, tunneling field effect transistors (TFETs) with strained-SiGe channel (via heterogeneous integration) may be used and is demonstrated using simulation. We mainly focus on the design and implementation of silicon germanium based tunnel field effect transistor, aiming to reduce the device operation voltage down to below 0.5V. Performance improvement in drain current as high as 200% has been achieved.
DOI:10.1109/DEVIC.2017.8073964