Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz

An L g = 40 nm, t ch ch = 7.0 nm In 0.53 Ga 0.47 As / InAs MOS-HEMT exhibiting f t = 420 GHz and f max = 562 GHz at V DS = 0.70 V, V GS = 0.30 V, and I DS = 0.793 mA/µm is reported. A 0.83 nm / 1.71 nm Al x O y N z / ZrO 2 high-k gate dielectric is used with a 3.0 / 4.0 nm In 0.53 Ga 0.47 As / InAs...

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Bibliographic Details
Published in2021 Device Research Conference (DRC) pp. 1 - 2
Main Authors Markman, Brian, Suran Brunelli, Simone Tommaso, Guidry, Matthew, Whitaker, Logan, Rodwell, Mark J.W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.06.2021
Subjects
Bandwidth
Capacitance
Extrapolation
Length measurement
Logic gates
Performance evaluation
Tin
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Summary:An L g = 40 nm, t ch ch = 7.0 nm In 0.53 Ga 0.47 As / InAs MOS-HEMT exhibiting f t = 420 GHz and f max = 562 GHz at V DS = 0.70 V, V GS = 0.30 V, and I DS = 0.793 mA/µm is reported. A 0.83 nm / 1.71 nm Al x O y N z / ZrO 2 high-k gate dielectric is used with a 3.0 / 4.0 nm In 0.53 Ga 0.47 As / InAs composite channel. At 40 nm L g , high peak g m,e = 2.9 mS/µm and record low g ds,e = 0.18 mS/µm at V DS = 0.70 V was achieved. Long gate length SS min = 69 mV/dec is observed. Bandwidth of the present devices is limited by parasitic C GS,p C GD,p .
ISSN:2640-6853
DOI:10.1109/DRC52342.2021.9467208