Comparison of instantaneous crystallization and metastable models in phase change memory cells

• Published in: 70th Device Research Conference pp. 145 - 146
• Main Authors: Faraclas, A., Williams, N., Bakan, G., Gokirmak, A., Silva, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2012
• Subjects: Heating; Tin
• ISBN: 1467311634; 9781467311632
• ISSN: 1548-3770; 2640-6853
• DOI: 10.1109/DRC.2012.6257017

Phase change memory (PCM) is a possible competitor for future generation non-volatile storage class memory due to its fast writing speed and aggressively scaled packing density. In PCM cells current is confined through narrow conductive paths to create high current densities in a chalcogenide material (Ge 2 Sb 2 Te 5 or GST is most commonly used). The resulting heat allows the material to switch between crystalline (set) and amorphous (reset) states, changing the cell's resistance by ~10-10 4 times depending on the cell dimensions. Less energy is required for melting smaller regions, therefore aggressive cell scaling results in reduced power and increased packing density. The properties of GST change by orders of magnitude as a function of temperature, and thus understanding its thermal dependency is crucial to accurately model phase change memory cell operation.