A 12-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70-80 GHz Band

This paper describes a novel single-chip W-band wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 10 Gb/s. The Zero-IF receiver peak gain is 50 dB, the noise figure is 7 dB whil...

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Bibliographic Details
Published in2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium pp. 1 - 4
Main Authors Sarkas, I., Nicolson, S.T., Tomkins, A., Laskin, E., Chevalier, P., Sautreuil, B., Voinigescu, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2009
Subjects
Bandwidth
BiCMOS integrated circuits
Gain
Germanium silicon alloys
Noise figure
Power generation
Quadrature phase shift keying
Silicon germanium
Transceivers
Transmitters
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Summary:This paper describes a novel single-chip W-band wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 10 Gb/s. The Zero-IF receiver peak gain is 50 dB, the noise figure is 7 dB while the 3-dB IF bandwidth extends over 6 GHz. The differential transmitter achieves a maximum output power of +9 dBm, while the transceiver occupies 1.9 mm times 1.1 mm. The total power consumption, including the 4 times 20 Gb/s PRBS generator, is 1.2 W from 1.5, 2.5 and 3.3 V power supplies.
ISSN:1550-8781
2374-8443
DOI:10.1109/csics.2009.5315791