The impact of process parameter variations on the electrical characteristics of a RESURF LDMOS and its compact modeling

In this paper, we have investigated the effect of parameter variations on the electrical characteristics of a RESURF LDMOS. The rate of change in each of the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters has be...

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Bibliographic Details
Published in2011 International Semiconductor Device Research Symposium (ISDRS) pp. 1 - 2
Main Authors Fathipour, V., Mojab, A., Malakoutian, M. A., Fathipour, S., Fathipour, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Doping
Mathematical model
Numerical models
Resistance
Semiconductor process modeling
Threshold voltage
Transistors
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Summary:In this paper, we have investigated the effect of parameter variations on the electrical characteristics of a RESURF LDMOS. The rate of change in each of the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters has been obtained. Furthermore, a model for the device output characteristics is presented and is verified by numerical simulations. To design a high-frequency high-power transistor, an accurate model for the power transistor is required. Several models for the device output characteristics have been proposed [1-3]. A good model should behave properly in all regions of the transistor operation and include the effects of quasi-saturation, a phenomenon commonly seen in power transistors when operating at high gate voltages. The model used here, also includes effects such as self heating and saturation in the N-Drift region.
ISBN:9781457717550
1457717557
DOI:10.1109/ISDRS.2011.6135354