Design and realization of a C-band 2kW GaN power amplifier module

A 2kW power amplifier module is described in this paper. It is designed to operate at C band, pulse width of 500 Ps, and duty cycle of 30%. The module has been physically implemented and achieved a high PAE of 30%, 63dBm output power and associated gain of 63dB. The main devices of this module are G...

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Bibliographic Details
Published in2016 IEEE MTT-S International Wireless Symposium (IWS) pp. 1 - 4
Main Authors Zhang Haibing, Xu Xiaofan, Kuang Xiaole, Zhu Weitao
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2016
Subjects
Cooling
GaN power amplifier module
Isolators
Multichip modules
PAE (power-added-efficiency)
Power amplifiers
power combiner/divider
Power combiners
Power generation
power supply modulation
Transistors
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Summary:A 2kW power amplifier module is described in this paper. It is designed to operate at C band, pulse width of 500 Ps, and duty cycle of 30%. The module has been physically implemented and achieved a high PAE of 30%, 63dBm output power and associated gain of 63dB. The main devices of this module are GaN HEMT power transistors working at class AB made in China. The output power of each transistor is more than 200 watts. In this paper, the main properties and key technologies of the GaN power amplifier module are presented.
DOI:10.1109/IEEE-IWS.2016.7585461