Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM
In this paper, statistical measurements on the retention behavior of the stable HfO x -based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An em...
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Published in | 2011 International Reliability Physics Symposium pp. MY.8.1 - MY.8.5 |
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Main Authors | , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
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IEEE
01.04.2011
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Abstract | In this paper, statistical measurements on the retention behavior of the stable HfO x -based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction. 10 years lifetime can be obtained with a constant read voltage of 0.2 V even at 160°C. Also the set time of the RRAM extrapolated by the empirical equation coincides with the experiment value. In addition, the shallow Weibull slope of the retention time can be improved when the variations of the initial resistance is well controlled. |
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AbstractList | In this paper, statistical measurements on the retention behavior of the stable HfO x -based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction. 10 years lifetime can be obtained with a constant read voltage of 0.2 V even at 160°C. Also the set time of the RRAM extrapolated by the empirical equation coincides with the experiment value. In addition, the shallow Weibull slope of the retention time can be improved when the variations of the initial resistance is well controlled. |
Author | Heng-Yuan Lee Chen-Han Tsai Pei-Yi Gu Yu-Sheng Chen Ru Huang Chen, F T Wen-Hsing Liu Pang-Shiu Chen Ming-Jinn Tsai Yen-Ya Hsu Shun-Min Wang Wei-Su Chen Lijie Zhang |
Author_xml | – sequence: 1 surname: Lijie Zhang fullname: Lijie Zhang email: zhanglijie@ime.pku.edu.cn organization: Inst. of Microelectron., Peking Univ., Beijing, China – sequence: 2 surname: Ru Huang fullname: Ru Huang organization: Inst. of Microelectron., Peking Univ., Beijing, China – sequence: 3 surname: Yen-Ya Hsu fullname: Yen-Ya Hsu organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 4 givenname: F T surname: Chen fullname: Chen, F T organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 5 surname: Heng-Yuan Lee fullname: Heng-Yuan Lee organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 6 surname: Yu-Sheng Chen fullname: Yu-Sheng Chen organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 7 surname: Wei-Su Chen fullname: Wei-Su Chen organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 8 surname: Pei-Yi Gu fullname: Pei-Yi Gu organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 9 surname: Wen-Hsing Liu fullname: Wen-Hsing Liu organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 10 surname: Shun-Min Wang fullname: Shun-Min Wang organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 11 surname: Chen-Han Tsai fullname: Chen-Han Tsai organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 12 surname: Ming-Jinn Tsai fullname: Ming-Jinn Tsai organization: Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan – sequence: 13 surname: Pang-Shiu Chen fullname: Pang-Shiu Chen organization: Dept. of Chem. & Mater. Eng., Ming Shin Univ. of Sci. & Technol., Hsinchu, Taiwan |
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Snippet | In this paper, statistical measurements on the retention behavior of the stable HfO x -based RRAM under various thermal/voltage/cycling stresses are... |
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SubjectTerms | breakdown data retention Electric breakdown Equations lifetime RRAM Stress Switches Temperature distribution Temperature measurement Testing |
Title | Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM |
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