Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

• Published in: 2011 International Reliability Physics Symposium pp. MY.8.1 - MY.8.5
• Main Authors: Lijie Zhang, Ru Huang, Yen-Ya Hsu, Chen, F T, Heng-Yuan Lee, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Wen-Hsing Liu, Shun-Min Wang, Chen-Han Tsai, Ming-Jinn Tsai, Pang-Shiu Chen
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2011
• Subjects: breakdown; data retention; Electric breakdown; Equations; lifetime; RRAM; Stress; Switches; Temperature distribution; Temperature measurement; Testing
• ISBN: 1424491134; 9781424491131
• ISSN: 1541-7026; 1938-1891
• DOI: 10.1109/IRPS.2011.5784591

In this paper, statistical measurements on the retention behavior of the stable HfO x -based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction. 10 years lifetime can be obtained with a constant read voltage of 0.2 V even at 160°C. Also the set time of the RRAM extrapolated by the empirical equation coincides with the experiment value. In addition, the shallow Weibull slope of the retention time can be improved when the variations of the initial resistance is well controlled.