Design of TAS-MRAM prototype for NV embedded memory applications

In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-M...

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Bibliographic Details
Published in2010 IEEE International Memory Workshop pp. 1 - 4
Main Authors Chaudhuri, Sumanta, Weisheng Zhao, Klein, Jacques-Olivier, Chappert, Claude, Mazoyer, Pascale
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
CMOS technology
High power amplifiers
Inverters
Magnetic fields
Magnetic tunneling
Operational amplifiers
Prototypes
Semiconductor device modeling
Temperature
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Summary:In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.
ISBN:9781424467198
1424467195
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488401