Low-power self-equalizing driver for silicon carrier interconnects with low bit error rate

This paper demonstrates and compares the power efficiency of a standard differential current mode driver operating over an FR-4 channel with an improved driver with pre-emphasis operating over a silicon carrier channel. The drivers were designed for a 45 nm process, and both achieved a bit error rat...

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Bibliographic Details
Published in2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems pp. 37 - 40
Main Authors Gadfort, P., Franzon, P.D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2009
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Summary:This paper demonstrates and compares the power efficiency of a standard differential current mode driver operating over an FR-4 channel with an improved driver with pre-emphasis operating over a silicon carrier channel. The drivers were designed for a 45 nm process, and both achieved a bit error rate of 10 -15 errors per bit while operating at 4 Gbps. The power of the improved driver was reduced to one-fourth that of the standard driver through the utilization of the silicon carrier channels and pre-emphasis.
ISBN:9781424444472
1424444470
ISSN:2165-4107
DOI:10.1109/EPEPS.2009.5338482