Low-power self-equalizing driver for silicon carrier interconnects with low bit error rate
This paper demonstrates and compares the power efficiency of a standard differential current mode driver operating over an FR-4 channel with an improved driver with pre-emphasis operating over a silicon carrier channel. The drivers were designed for a 45 nm process, and both achieved a bit error rat...
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Published in | 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems pp. 37 - 40 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2009
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Subjects | |
Online Access | Get full text |
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Summary: | This paper demonstrates and compares the power efficiency of a standard differential current mode driver operating over an FR-4 channel with an improved driver with pre-emphasis operating over a silicon carrier channel. The drivers were designed for a 45 nm process, and both achieved a bit error rate of 10 -15 errors per bit while operating at 4 Gbps. The power of the improved driver was reduced to one-fourth that of the standard driver through the utilization of the silicon carrier channels and pre-emphasis. |
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ISBN: | 9781424444472 1424444470 |
ISSN: | 2165-4107 |
DOI: | 10.1109/EPEPS.2009.5338482 |