Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier

An Al 0.27 Ga 0.73 N/GaN HEMT is developed at L G =100nm gate length with In 0.1 Ga 0.9 N back-barrier. The physical insight of In 0.1 Ga 0.9 N as back-barrier and the impact of its height on transconductance are investigated to find the optimized dimension of the device with improved transconductan...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 131 - 135
Main Authors Nayak, Soumya Prava, Dutta, Pradipta, Mohapatra, S. K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Aluminum gallium nitride
back-barrier
Gallium nitride
HEMT
HEMTs
Kink Effect
Logic gates
MODFETs
Transconductance
Wide band gap semiconductors
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Summary:An Al 0.27 Ga 0.73 N/GaN HEMT is developed at L G =100nm gate length with In 0.1 Ga 0.9 N back-barrier. The physical insight of In 0.1 Ga 0.9 N as back-barrier and the impact of its height on transconductance are investigated to find the optimized dimension of the device with improved transconductance, g m , at 45nm gate length. Non-linearity like Kink Effect is also identified. Some initial level of ac analysis is done to obtain the C GS plot with varying gate lengths. With necessary simulations, 33% improvement in peak gm and 26.3% reduction in Cgs are obtained.
DOI:10.1109/DEVIC.2017.8073921