Ni2P Contact Technology for 300 mm Si Photonics Platform

In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. Ni 2 P layers, obtained by magnetron sputtering of a Ni 2 P target, were implemented and integrated on III-V-based structures to extract the contact resistivity o...

Full description

Saved in:
Bibliographic Details
Published in2021 20th International Workshop on Junction Technology (IWJT) pp. 1 - 4
Main Authors Boyer, F., Famulok, R., Minoret, S., Coudurier, N., Jany, C., Gergaud, P., Rodriguez, Ph
Format Conference Proceeding
LanguageEnglish
Published JSAP 10.06.2021
Subjects
Conductivity
Contact technology
InP
Junctions
Metallization
Ni 2 P
Nickel
Si Photonics
Silicon
Thermal resistance
Thermal stability
Online AccessGet full text

Cover

More Information
Summary:In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. Ni 2 P layers, obtained by magnetron sputtering of a Ni 2 P target, were implemented and integrated on III-V-based structures to extract the contact resistivity on n-InP and p-InGaAs. Due to its high thermal stability and low contact resistivities, Ni 2 P metallization exhibited the best results among the Ni-based metallizations studied for contacting n-InP layers.
DOI:10.23919/IWJT52818.2021.9609464