Excellent silicon thickness uniformity on Ultra-Thin SOI for controlling Vt variation of FDSOI

Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCut™ technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 Å o...

Full description

Saved in:
Bibliographic Details
Published in2011 IEEE International Conference on IC Design & Technology pp. 1 - 3
Main Authors Schwarzenbach, W, Cauchy, X, Boedt, F, Bonnin, O, Butaud, E, Girard, C, Nguyen, B, Mazure, C, Maleville, C
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
CMOS integrated circuits
CMOS technology
Fluctuations
Production
Silicon
Substrates
Thickness control
Online AccessGet full text

Cover

More Information
Summary:Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCut™ technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 Å on preproduction volume. Total thickness variation of ± 5 Å is targeted.
ISBN:1424490197
9781424490196
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2011.5783188