Copper redistribution layer process for GaAs MMICs

A new copper metallization process is proposed that fabricates a redistribution layer on GaAs MMICs (monolithic microwave integrated circuits). This process enables the placement of Cu bonding pads and Cu pillar bumps over an MMIC. PBO (polybenzoxazole) is used as the low-k dielectric polymer for is...

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Bibliographic Details
Published in2012 IEEE/MTT-S International Microwave Symposium Digest pp. 1 - 3
Main Authors Takatani, Shinichiro, Tim Hsiao, Kay Wu, Yu-Chiao Chen, Jia-Shyan Wu, Jung-Tao Chung, Cheng-Kuo Lin, Shu-Hsiao Tsai
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2012
Subjects
Bonding
Copper
GaAs
HEMT
HEMTs
Heterojunction bipolar transistors
Irrigation
low-k
MMIC
MMICs
polymer
redistribution layer
Silicon
switch
Voltage-controlled oscillators
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Summary:A new copper metallization process is proposed that fabricates a redistribution layer on GaAs MMICs (monolithic microwave integrated circuits). This process enables the placement of Cu bonding pads and Cu pillar bumps over an MMIC. PBO (polybenzoxazole) is used as the low-k dielectric polymer for isolation. The thickness of the PBO layer is designed to be 10 mm in order to minimize the parasitic capacitance introduced by bonding pads placed on the active region of a HEMT (high electron mobility transistor). A single-pole double-throw HEMT switch fabricated by the proposed process exhibits good RF performance with negligible effect of the bonding pads.
ISBN:1467310859
9781467310857
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2012.6259484