Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode

Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.

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Bibliographic Details
Published in2012 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Hardy, M. T., Hsu, P. S., Koslow, I., Feezell, D. F., Nakamura, S., Speck, J. S., DenBaars, S. P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2012
Subjects
Diode lasers
Fluorescence
Gallium nitride
Semiconductor lasers
Strain
Stress
Waveguide lasers
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Summary:Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
ISBN:1467318396
9781467318396
ISSN:2160-8989
2160-9004