AlGaN/GaN Bidirectional Power Switch

This paper presents a novel approach to achieving BPS functionality using AIGaN/GaN HFETs and for the first time presents experimental data showing the power bidirectional capability of the devices. We present the first detailed study of the bidirectional power switching capability of single and dua...

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Bibliographic Details
Published in2007 65th Annual Device Research Conference pp. 97 - 98
Main Authors Tipirneni, N., Wang, B., Monti, A., Simin, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Aluminum gallium nitride
Electrodes
FETs
Gallium nitride
HEMTs
Matrix converters
MODFETs
Power conversion
Power semiconductor switches
Voltage
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Summary:This paper presents a novel approach to achieving BPS functionality using AIGaN/GaN HFETs and for the first time presents experimental data showing the power bidirectional capability of the devices. We present the first detailed study of the bidirectional power switching capability of single and dual gate AIGaN/GaN BPS. One approach to achieve a symmetrical voltage blocking capability in AIGaN/GaN HFET is to place the gate electrode in the middle of the source-drain spacing.
ISBN:1424411017
9781424411016
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373667