Discrete and Half Bridge Module using GaN HFETs for High Temperature Applications more than 200°C

AlGaN/GaN HFETs are expected to be a good candidates for power switching application at high temperatures. We optimized the fabrication process of the AlGaN/GaN HFET. A low specific on-state resistance of 6.3 mΩcm 2 and a large breakdown voltage of 600 V were achieved at 225°C. We also designed and...

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Bibliographic Details
Published inProceedings of the 19th International Symposium on Power Semiconductor Devices and IC's pp. 117 - 120
Main Authors Nomura, T., Masuda, M., Yoshida, S., Yamate, T., Sudo, Y., Takeda, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Aluminum gallium nitride
Bridge circuits
Delay
Fabrication
Gallium nitride
GaN
HEMTs
HFET
high temperature
MODFETs
MOSFET circuits
Silicon carbide
switching
Temperature
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Summary:AlGaN/GaN HFETs are expected to be a good candidates for power switching application at high temperatures. We optimized the fabrication process of the AlGaN/GaN HFET. A low specific on-state resistance of 6.3 mΩcm 2 and a large breakdown voltage of 600 V were achieved at 225°C. We also designed and fabricated a half bridge module using the AlGaN/GaN HFETs and SiC SBDs. Switching characteristics of the AlGaN/GaN HFET were investigated. The small turn-on delay of 7.2 nsec, which is 1/10 of Si MOSFET, was observed. The switching characteristics of the HFET showed no significant degradation up to 225°C.
ISBN:1424410959
9781424410958
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2007.4294946