Impact of Chipset Configuration on Thermal Performance of Smartphones
Smartphone features are dependent on design and performance of IC chipsets hosted within it. Many times, thermal performance of a chipset varies in one device vs. another due to differences in IC placement, PCB configuration, and system-level thermal design. This paper reports a comprehensive study...
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Published in | 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) pp. 1015 - 1021 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Smartphone features are dependent on design and performance of IC chipsets hosted within it. Many times, thermal performance of a chipset varies in one device vs. another due to differences in IC placement, PCB configuration, and system-level thermal design. This paper reports a comprehensive study on how architecture of chipset placement and PCB shape impacts thermal performance of a given chipset. In addition, it explores how implementation of Thermal Interface Materials (TIMs) impacts junction and skin temperatures. A phone model reflecting thermal and mechanical characteristics of a high-tier smartphone is utilized as the platform to drive the study. Thermal performance of a same chipset is evaluated based on two PCB shapes (L-shape and H-shape) and two placement architectures (single-side and double-side). Junction temperature of IC packages and skin temperature of the phone are monitored to highlight the thermal performance of each configuration. It is found that double-side placement thermally outperforms single-side placement as it can utilize more heat sinking features within smartphone. Further, the H-shape PCB thermally outperforms the L-shape PCB as the former facilitates more in-plane heat spreading. Findings highlight the importance of striking a balance between junction and skin temperatures in smartphones. |
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ISSN: | 2577-0799 |
DOI: | 10.1109/ITHERM.2018.8419463 |