Design of a radiation tolerant CMOS image sensor

This paper presents the design of a radiation tolerant CMOS image sensor for space applications. The pixel is based on a commercially available 4T pinned photodiode architecture and is designed using a number of radiation-tolerant physical layout techniques. In addition, a simple yet robust programm...

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Bibliographic Details
Published in2011 International Symposium on Integrated Circuits pp. 412 - 415
Main Authors Xinyuan Qian, Hang Yu, Bo Zhao, Shoushun Chen, Kay Soon Low
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Arrays
CMOS image sensors
Dark current
Leakage current
Photodiodes
Transistors
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Summary:This paper presents the design of a radiation tolerant CMOS image sensor for space applications. The pixel is based on a commercially available 4T pinned photodiode architecture and is designed using a number of radiation-tolerant physical layout techniques. In addition, a simple yet robust programmable column biasing current is proposed to deal with the dramatic temperature fluctuations. A prototype chip consisting 256×256 pixel array has been implemented using TSMC 0.18 CIS process.
ISBN:161284863X
9781612848631
ISSN:2325-0631
DOI:10.1109/ISICir.2011.6131984