Corner rounding to strengthen silicon pressure sensors using DRIE

In this work, we optimize an existing piezoresitive silicon pressure sensor by realizing rounded structural edges instead of the sharp edges typical for KOH-etching of the sensor membrane. The advantages of an edge featuring a diameter are estimated by FEM-simulation. Based on simulation results we...

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Bibliographic Details
Published in2008 IEEE Sensors pp. 1576 - 1579
Main Authors Ngo, H.-D., Tham, A.-T., Simon, M., Obermeier, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Anisotropic magnetoresistance
Biomembranes
Biosensors
Etching
Mechanical sensors
Piezoresistance
Plasma applications
Sensor phenomena and characterization
Silicon
Stress
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Summary:In this work, we optimize an existing piezoresitive silicon pressure sensor by realizing rounded structural edges instead of the sharp edges typical for KOH-etching of the sensor membrane. The advantages of an edge featuring a diameter are estimated by FEM-simulation. Based on simulation results we developed a combination of KOH and plasma etching process to obtain edges with a radius of 5 mum. The experimentally determined difference between the failure pressure of the standard sensors of approx. 3 bar and of the modified sensors of approx. 8 bar is 5 bar. This substantial increase in failure pressure extends the working range of the pressure sensor without compromising its sensitivity or signal quality. The new process requires only minor changes of the old process and is suitable for mass production of micro pressure sensors.
ISBN:1424425808
9781424425808
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2008.4716750