The optimization of high indium and high phosphorus content InGaAs/GaAsP strained layer superlattices for use in multijunction solar cells

InGaAs/GaAsP strained layer superlattices (SLS) with high phosphorus and high indium content inserted into the intrinsic region of GaAs solar cells increases short circuit current with minimal impact on open circuit voltage. Very thin, high phosphorus content barriers provide several key advantages...

Full description

Saved in:
Bibliographic Details
Published in2012 38th IEEE Photovoltaic Specialists Conference pp. 001456 - 001460
Main Authors Carlin, C. Zachary, Bradshaw, G. K., Samberg, J. P., Colter, P. C., El-Masry, N. A., Bedair, S. M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2012
Subjects
Absorption
Gallium arsenide
Indium
Indium gallium arsenide
InGaAs/GaAsP
Photovoltaic cells
quantum size effect
quantum well solar cell
staggered well
Strain
superlattice
Superlattices
tunneling
Online AccessGet full text

Cover

More Information
Summary:InGaAs/GaAsP strained layer superlattices (SLS) with high phosphorus and high indium content inserted into the intrinsic region of GaAs solar cells increases short circuit current with minimal impact on open circuit voltage. Very thin, high phosphorus content barriers provide several key advantages over other methods, namely 1) thin barriers occupy less space in a depletion width-limited SLS, 2) carrier transport is primarily due to tunneling, and 3) the height of the barrier, or depth of the well, is not subject to thermionic emission requirements. Our staggered well concept reduces quantum size effects to increase absorption beyond the GaAs band edge.
ISBN:1467300640
9781467300643
ISSN:0160-8371
DOI:10.1109/PVSC.2012.6317871