A study of single event effects induced by heavy charged particles in 180 nm SoI technology

This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit-flip cross sections and ASIC power consumption me...

Full description

Saved in:
Bibliographic Details
Published in2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) pp. 1 - 4
Main Authors Marcisovska, Maria, Benka, Tomas, Finger, Miroslav, Havranek, Miroslav, Hejtmanek, Martin, Janoska, Zdenko, Kabatova, Anezka, Kafka, Vladimir, Marcisovsky, Michal, Mitrofanov, Semen V., Neue, Gordon, Popule, Jiri, Skuratov, Vladimir A., Suchanek, Petr, Svihra, Peter, Tomasek, Lukas, Vaculciak, Matej, Vancura, Pavel, Vrba, Vaclav
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Atmospheric measurements
Detectors
Ions
Particle measurements
Radiation effects
Shift registers
Temperature measurement
Online AccessGet full text

Cover

More Information
Summary:This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit-flip cross sections and ASIC power consumption measurements were performed while irradiating the device with Ne, Ar and Xe ions, provided by the U400M isochronous cyclotron at the FLNR laboratory at JINR.
ISSN:2577-0829
DOI:10.1109/NSSMIC.2018.8824677