Development of 250W EUV light source for HVM lithography

• Published in: 2017 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 4
• Main Authors: Yamazaki, Taku, Nakarai, Hiroaki, Abe, Tamotsu, Nowak, Krzysztof M., Kawasuji, Yasufumi, Okamoto, Takeshi, Tanaka, Hiroshi, Watanabe, Yukio, Hori, Tsukasa, Kodama, Takeshi, Yamagida, Tatsuya, Shiraishi, Yutaka, Saitou, Takashi, Mizoguchi, Hakaru
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2017
• Subjects: Cogeneration; Lead; Lithography; Magnetic semiconductors; Temperature sensors
• DOI: 10.1109/CSTIC.2017.7919759

Gigaphoton has been developing extreme ultra violet (EUV) light source with the method of laser produced plasma (LPP) which is the most promising solution of the high power light source with 13.5 nm wavelength for high volume manufacturing (HVM) EUV lithography. Unique and original technologies such as combination of pulsed CO 2 laser and tin droplets, dual wavelength laser pulses shooting and debris mitigation with magnetic field have been developed. The theoretical and experimental data have clearly showed the advantage of our proposed method and it is promising to realize 250 W EUV power by 20 kW level pulsed CO 2 laser. In the proto #2 light source, 130 W with 100 kHz, 50% duty cycle operation during 120 hour was achieved and recently short term operation at 250 W with closed loop operation was demonstrated. In 2016 the first practical source for HVM; "GL200E" was constructed and high power CO 2 laser power more than 20 kW was already confirmed in collaboration with Mitsubishi electric cooperation. As a test run, five hours operation with 100 W EUV power and conversion efficiency (CE) 5% was confirmed. The next tests are being conducted continuously.