Cavity-Enhanced Electroluminescence from GeSn p-i-n Diode on Silicon-on-Insulator Substrate

We report cavity-enhanced direct band electroluminescence from GeSn p-i-n diodes on silicon-on-insulator substrates. A Fabry-Perot cavity was created between the buried oxide layer and the deposited oxide layer to enhance electroluminescence from the GeSn active layer.

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Bibliographic Details
Published in2018 IEEE Photonics Society Summer Topical Meeting Series (SUM) pp. 51 - 52
Main Authors Huang, Bo-Jun, Chang, Guo-En
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2018
Subjects
Cavity resonators
Electroluminescence
P-i-n diodes
PIN photodiodes
Silicon
Silicon-on-insulator
Substrates
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Summary:We report cavity-enhanced direct band electroluminescence from GeSn p-i-n diodes on silicon-on-insulator substrates. A Fabry-Perot cavity was created between the buried oxide layer and the deposited oxide layer to enhance electroluminescence from the GeSn active layer.
ISSN:2376-8614
DOI:10.1109/PHOSST.2018.8456699