High power 808 nm InGaAlAs semiconductor lasers by MBE

• Published in: International Conference on Molecular Bean Epitaxy p. 343
• Main Authors: Qu Yi, Bo Baoxue, Liu Guojun, Gao Xin, Jiang Huilin
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2002
• Subjects: Biomedical equipment; Laser beam cutting; Laser excitation; Materials processing; Medical services; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers
• DOI: 10.1109/MBE.2002.1037900
• ISBN: 9780780375819; 0780375815

High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such that the resulting quaternary (InAlGaAs) strained-layer lasers operate in the region of 808 nm. Such lasers were proposed as potentially more robust alternatives to AlGaAs lasers, based on expectations of the lifetime improvements. The suppression of the propagation of dark-line defects (DLDS) in the InAlGaAs devices. Another improvement of lower thresholds has been realized for the devices.