High power 808 nm InGaAlAs semiconductor lasers by MBE
High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such tha...
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Published in | International Conference on Molecular Bean Epitaxy p. 343 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
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Abstract | High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such that the resulting quaternary (InAlGaAs) strained-layer lasers operate in the region of 808 nm. Such lasers were proposed as potentially more robust alternatives to AlGaAs lasers, based on expectations of the lifetime improvements. The suppression of the propagation of dark-line defects (DLDS) in the InAlGaAs devices. Another improvement of lower thresholds has been realized for the devices. |
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AbstractList | High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such that the resulting quaternary (InAlGaAs) strained-layer lasers operate in the region of 808 nm. Such lasers were proposed as potentially more robust alternatives to AlGaAs lasers, based on expectations of the lifetime improvements. The suppression of the propagation of dark-line defects (DLDS) in the InAlGaAs devices. Another improvement of lower thresholds has been realized for the devices. |
Author | Jiang Huilin Bo Baoxue Liu Guojun Gao Xin Qu Yi |
Author_xml | – sequence: 1 surname: Qu Yi fullname: Qu Yi organization: Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China – sequence: 2 surname: Bo Baoxue fullname: Bo Baoxue organization: Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China – sequence: 3 surname: Liu Guojun fullname: Liu Guojun organization: Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China – sequence: 4 surname: Gao Xin fullname: Gao Xin organization: Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China – sequence: 5 surname: Jiang Huilin fullname: Jiang Huilin organization: Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China |
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Snippet | High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as... |
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SubjectTerms | Biomedical equipment Laser beam cutting Laser excitation Materials processing Medical services Power lasers Pump lasers Quantum well lasers Semiconductor lasers Solid lasers |
Title | High power 808 nm InGaAlAs semiconductor lasers by MBE |
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