High power 808 nm InGaAlAs semiconductor lasers by MBE

High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such tha...

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Bibliographic Details
Published inInternational Conference on Molecular Bean Epitaxy p. 343
Main Authors Qu Yi, Bo Baoxue, Liu Guojun, Gao Xin, Jiang Huilin
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Biomedical equipment
Laser beam cutting
Laser excitation
Materials processing
Medical services
Power lasers
Pump lasers
Quantum well lasers
Semiconductor lasers
Solid lasers
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Summary:High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such that the resulting quaternary (InAlGaAs) strained-layer lasers operate in the region of 808 nm. Such lasers were proposed as potentially more robust alternatives to AlGaAs lasers, based on expectations of the lifetime improvements. The suppression of the propagation of dark-line defects (DLDS) in the InAlGaAs devices. Another improvement of lower thresholds has been realized for the devices.
ISBN:9780780375819
0780375815
DOI:10.1109/MBE.2002.1037900