High power 808 nm InGaAlAs semiconductor lasers by MBE
High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such tha...
Saved in:
Published in | International Conference on Molecular Bean Epitaxy p. 343 |
---|---|
Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | High power 808 nm semiconductor lasers become more and more important for pumping solid-state lasers, medical applications and for material processing such as welding, cutting, or surface treatment. In this paper, Indium has successfully been incorporated into AlGaAs quantum well structures such that the resulting quaternary (InAlGaAs) strained-layer lasers operate in the region of 808 nm. Such lasers were proposed as potentially more robust alternatives to AlGaAs lasers, based on expectations of the lifetime improvements. The suppression of the propagation of dark-line defects (DLDS) in the InAlGaAs devices. Another improvement of lower thresholds has been realized for the devices. |
---|---|
ISBN: | 9780780375819 0780375815 |
DOI: | 10.1109/MBE.2002.1037900 |