Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy

The tunneling field-effect transistor (TFET) has been attracting increasing attention for low-voltage logic application [1]. Recently, III-V semiconductor TFETs are being extensively explored, showing higher on-state current than Si TFETs [1]-[3]. However, low subthreshold swings (SS) have not yet b...

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Published in2011 International Semiconductor Device Research Symposium (ISDRS) pp. 1 - 2
Main Authors Qin Zhang, Guangle Zhou, Xing, H. G., Seabaugh, A. C., Kun Xu, Kirillov, O. A., Richter, C. A., Nguyen, N. V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Aluminum oxide
Indium gallium arsenide
Indium phosphide
Logic gates
Personal digital assistants
Photonics
USA Councils
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Summary:The tunneling field-effect transistor (TFET) has been attracting increasing attention for low-voltage logic application [1]. Recently, III-V semiconductor TFETs are being extensively explored, showing higher on-state current than Si TFETs [1]-[3]. However, low subthreshold swings (SS) have not yet been demonstrated on any III-V TFETs, possibly due to the high density of traps at the high-k oxide and semiconductor interface [2]-[3]. It has been shown that post deposition anneal (PDA) can improve SS by reducing the interface trap density in III V TFETs [2].
ISBN:9781457717550
1457717557
DOI:10.1109/ISDRS.2011.6135253