High mobility metal oxide thin film transistors active-matrix organic light-emitting diode television

• Published in: 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 17 - 20
• Main Authors: Tsung-Hsiang Shih, Hung-Che Ting, Chih-Lei Chen, Lun Tsai, Chia-Yu Chen, Li-Fong Lin, Hong-Shen Lin, Lee-Hsun Chang, Yu-Hsin Lin
• Format: Conference Proceeding
• Language: English
• Published: JSAP 01.07.2014
• Subjects: Active matrix organic light emitting diodes; Image color analysis; Plasmas; Stress; Thin film transistors
• DOI: 10.1109/AM-FPD.2014.6867110

We reported large size amorphous Indium-Gallium-Zinc-Oxide and Indium-Tin-Zinc-Oxide thin film transistors active-matrix organic light-emitting diode television development history in AUO. The Gen6 threshold voltage uniformity can lower than 1.0V. Amorphous Indium-Tin-Zinc-Oxide thin film transistors show a higher mobility of 33.2 cm 2 /VS. Amorphous 56 inches back channel etch type Indium-Tin-Zinc-Oxide active-matrix organic light-emitting diode television is 1st time revealed. Metal-organic chemical vapor deposition system is used to evaluate the new high mobility material. The side-by-side organic light-emitting diode device is realized by fine metal mask. The dam and fill encapsulation method shows a simple process procedure and highly stability. Ink jet printing is adopted to produce a small size full color panel. By the application of compensation pixel circuit, the panel drove by AUO engine shows an excellent characteristic.