Investigation of Orientation Dependence of the Thermal Expansion Coefficient in Silicon MEMS Resonators

The aim of this study is to investigate the behavior of the thermal expansion coefficient (CTE) of silicon at different crystallographic orientations through studies of the quality factor, Q, over a wide range of temperatures. We investigate how the observed effects of CTE may deviate from the expec...

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Bibliographic Details
Published in2018 IEEE International Frequency Control Symposium (IFCS) pp. 1 - 4
Main Authors Rodriguez, Janna, Vukasin, Gabrielle D., Glaze, Grant M., Hopcroft, Matthew A., Comenencia Ortiz, Lizmarie, Ahn, Chae H., Ng, Eldwin, Park, Woosung, Kenny, Thomas W., Watson, Christopher A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
Subjects
anchor damping
coefficient of thermal expansion (CTE)
crystal orientations
crystallographic orientations
Damping
low temperature
Micromechanical devices
quality factor
Resonators
Silicon
Temperature
Temperature dependence
Thermal expansion
thermal expansion coefficient
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Summary:The aim of this study is to investigate the behavior of the thermal expansion coefficient (CTE) of silicon at different crystallographic orientations through studies of the quality factor, Q, over a wide range of temperatures. We investigate how the observed effects of CTE may deviate from the expected isotropic behavior due to irregularities of fabrication, or because of the influence of doping or other effects.
ISSN:2327-1949
DOI:10.1109/FCS.2018.8597581