Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics

In this work, we present an experimental method to obtain the location of the pinch-off point in a MOSFET biased in saturation. The proposed methodology, applicable to nanoscale devices, enables lateral profiling of hot-carrier-induced defects directly from measured data without the need of extensiv...

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Bibliographic Details
Published in2018 IEEE International Reliability Physics Symposium (IRPS) pp. 6E.1-1 - 6E.1-6
Main Authors Wang, Miaomiao, Southwick, Richard G., Cheng, Kangguo, Stathis, James H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2018
Subjects
Defect distribution
FinFET
Hot carrier
I D -V D
Lateral profiling
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Summary:In this work, we present an experimental method to obtain the location of the pinch-off point in a MOSFET biased in saturation. The proposed methodology, applicable to nanoscale devices, enables lateral profiling of hot-carrier-induced defects directly from measured data without the need of extensive computer simulation or complicated analytical modeling.
ISSN:1938-1891
DOI:10.1109/IRPS.2018.8353639