The influence of dose rate on ultra shallow surface dopant profile

Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becom...

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Bibliographic Details
Published in2014 20th International Conference on Ion Implantation Technology (IIT) pp. 1 - 4
Main Authors Shao-Yu Hu, Ger-Pin Lin, Ching-I Li, Hong Lu, Zhimin Wan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
activation
Doping profiles
Dose rate
Implants
ion implant
Junctions
Performance evaluation
SIMS
Surface treatment
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Summary:Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.
DOI:10.1109/IIT.2014.6939964