A 28-90-GHz GaN Power Amplifier MMIC Using an Integrated fT-Doubler Topology

• Published in: 2021 IEEE MTT-S International Microwave Symposium (IMS) pp. 606 - 609
• Main Authors: Cwiklinski, Maciej, Bruckner, Peter, Leone, Stefano, Friesicke, Christian, Van Raay, Friedbert, Wagner, Sandrine, Quay, Rudiger
• Format: Conference Proceeding
• Language: English
• Published: IEEE 07.06.2021
• Subjects: Broadband; fT-doubler; gallium nitride (GaN); high-electron-mobility transistor (HEMT); Layout; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Microwave transistors; millimeter-waves; monolithic microwave integrated circuit (MMIC); Power amplifiers; Topology
• ISSN: 2576-7216
• DOI: 10.1109/IMS19712.2021.9574968

In this paper, we present a GaN-based f T -doubler topology using a novel integrated layout. This compact approach allows for minimizing the layout-induced parasitic effects and, as a result, enables operation at millimeter-wave frequencies. In order to demonstrate the broadband potential of the f T -doubler topology employing the novel integrated layout approach, a 3-stage amplifier is reported. It can provide more than 10 dB of small-signal gain over a 28-90-GHz band, which is equivalent to a fractional operating bandwidth of 105 % (1.68 octaves). In large-signal operation, this MMIC can deliver from 14.5 dBm to 20.6 dBm of output power over a 30-90-GHz band. This circuit is able to provide a full coverage of the Q-band (33-50 GHz), U-band (40-60 GHz), V-band (50-75 GHz), E-band (60-90 GHz), and almost the entire Ka-band (26.5-40 GHz). To the best of our knowledge, this is the first demonstration of an FET-based integrated f T -doubler circuit operating at such high frequencies.