Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs
Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER c...
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Published in | 2012 IEEE International Reliability Physics Symposium (IRPS) pp. 5B.3.1 - 5B.3.7 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2012
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Subjects | |
Online Access | Get full text |
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Summary: | Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER compared to normally-incident ions for triple-well SRAM cells. |
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ISBN: | 145771678X 9781457716782 |
ISSN: | 1541-7026 1938-1891 |
DOI: | 10.1109/IRPS.2012.6241845 |