Novel Process Combining SOI and Strained Circuitry

• Published in: 2006 IEEE international SOI Conferencee Proceedings pp. 49 - 50
• Main Authors: Belfordab, R., Qing Xu, Sood, S., Acosta, A., Thrift, A., Zell, J., Bosworth, L.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2006
• Subjects: Biomembranes; Capacitive sensors; Circuits; MOSFETs; Polymers; Silicon on insulator technology; Strain measurement; Stress; Tensile strain; Wafer bonding
• ISBN: 9781424402892; 1424402891
• ISSN: 1078-621X; 2577-2295
• DOI: 10.1109/SOI.2006.284427

In this work the authors use the most accurate measurement of strain, which is the direct (%) elongation of the polyimide carrier. This is the only appropriate method of reporting mechanical-stress induced elongation. Improvement in n-type has been calculated to be a maximum at 1.2% biaxial strains (Rim et al., 2002). The authors have observed optima at much lesser strain values by direct measurement. Anisotropic straining can be optimized to further reduce the total 3-D strain; out-of-plane compressive and in-plane tensile strain. In this way the defect problems common in biaxially strained substrates can be avoided