Electrical Properties of Ultra Thin Multilayer Dielectrics on Polysilicon

We demonstrate the feasibility of very thin ONO (SiO 2 /Si 3 N 4 /SiO 2 ) dielectrics on poly-Si for 16M DRAM application. For D ox eff. = 8.5nm, the leakage current density is lower than 10 -8 A/cm 2 , and the long term stability is more than 10 years at electric fields of 5.5MV/cm. The onset of tu...

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Bibliographic Details
Published inESSDERC '89: 19th European Solid State Device Research Conference pp. 357 - 360
Main Authors Hirschler, J., Thanh, L. Do, Kusters, K.H., Sichart, K. v.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1989
Subjects
Current density
Current measurement
Density measurement
Dielectric measurements
Nonhomogeneous media
Random access memory
Semiconductor films
Stress measurement
Thickness measurement
Time measurement
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Summary:We demonstrate the feasibility of very thin ONO (SiO 2 /Si 3 N 4 /SiO 2 ) dielectrics on poly-Si for 16M DRAM application. For D ox eff. = 8.5nm, the leakage current density is lower than 10 -8 A/cm 2 , and the long term stability is more than 10 years at electric fields of 5.5MV/cm. The onset of tunneling current in ONO dielectrics depends on the thickness of the SiO 2 entry potential barrier. The high field current characteristic depends on the thickness of the SiO 2 exit potential barrier.
ISBN:9780387510002
0387510001
DOI:10.1007/978-3-642-52314-4_72