Single-crystal CuIn1−xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
We report on the epitaxial growth of Cu(In,Ga)Se 2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epil...
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Published in | 2014 Fotonica AEIT Italian Conference on Photonics Technologies pp. 1 - 4 |
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Main Authors | , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
AEIT
01.05.2014
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Subjects | |
Online Access | Get full text |
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Summary: | We report on the epitaxial growth of Cu(In,Ga)Se 2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells. |
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DOI: | 10.1109/Fotonica.2014.6843938 |