Single-crystal CuIn1−xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique

We report on the epitaxial growth of Cu(In,Ga)Se 2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epil...

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Bibliographic Details
Published in2014 Fotonica AEIT Italian Conference on Photonics Technologies pp. 1 - 4
Main Authors Colace, L., Bronzoni, M., De Iacovo, A., Frigeri, P., Gombia, E., Maragliano, C., Mezzadri, F., Nasi, L., Pattini, F., Rampino, S., Seravalli, L., Trevisi, G.
Format Conference Proceeding
LanguageEnglish
Published AEIT 01.05.2014
Subjects
CIGS
Coils
Electric potential
epitaxial CIGS
Epitaxial growth
low-temperature epitaxy
Microscopy
Photovoltaic cells
Radio frequency
thin film solar cells
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Summary:We report on the epitaxial growth of Cu(In,Ga)Se 2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.
DOI:10.1109/Fotonica.2014.6843938