An analytical estimation model for the spreading resistance of Double-Gate FinFETs

The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is v...

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Bibliographic Details
Published in2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) pp. 1 - 4
Main Authors Malheiro, C. T., Pereira, A. S. N., Giacomini, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2012
Subjects
Current density
Doping
Double Gate FinFETs
FinFETs
Logic gates
Numerical models
numerical simulation
parasitic resistance
Resistance
Semiconductor process modeling
spreading resistance
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Summary:The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.
ISBN:9781457711169
1457711168
ISSN:2165-3542
DOI:10.1109/ICCDCS.2012.6188945