High aspect silicon structures using metal assisted chemical etching

This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology....

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Bibliographic Details
Published in2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) pp. 720 - 723
Main Authors Toan, N. V., Toda, M., Ono, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2016
Subjects
Chemicals
Etching
Fabrication
Metals
Silicon
Substrates
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Summary:This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.
DOI:10.1109/NANO.2016.7751348