InP-based self-aligned internally series-connected RTD/HBT for threshold gate ICs

An internally series-connected RTD (Resonant Tunneling Diode)/HBT (Heterojunction Bipolar Transistor) technology using an etch back process with a self-aligned base metallization has been proposed. The proposed device shows a reduced peak voltage compared to the externally series-connected device (f...

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Bibliographic Details
Published inIPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials pp. 1 - 3
Main Authors Jaehong Park, Jongwon Lee, Jooseok Lee, Yongsik Jeong, Kyounghoon Yang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Heterojunction bipolar transistors
Integrated circuits
Logic gates
Materials
Performance evaluation
Prototypes
Resonant tunneling devices
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Summary:An internally series-connected RTD (Resonant Tunneling Diode)/HBT (Heterojunction Bipolar Transistor) technology using an etch back process with a self-aligned base metallization has been proposed. The proposed device shows a reduced peak voltage compared to the externally series-connected device (from 0.88 to 0.77 V). The reduced parasitic resistance values are estimated to be in a range of 10~12 Ω. To demonstrate an applicability of the developed approach to a basic digital gate, a threshold gate has been implemented. At a clock frequency of 3 GHz, the threshold gate IC exhibits the correct performance characteristics.
ISBN:9781457717536
1457717530
ISSN:1092-8669