Integrated non-III-nitride/III-nitride tandem solar cell

III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcel...

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Bibliographic Details
Published in69th Device Research Conference pp. 265 - 266
Main Authors Toledo, N. G., Cruz, S. C., Neufeld, C. J., Lang, J. R., Scarpulla, M. A., Buehl, T., Gossard, A. C., Denbaars, S. P., Speck, J. S., Mishra, U. K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Gallium nitride
Indium tin oxide
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Summary:III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcells. The integration of III-N based solar cells, which have currently been demonstrated to work well above 2.0 eV, with mature IV and III-V based solar cell technologies, which work well at bandgaps ≤ 2.0 eV, has the potential to improve the efficiency of current multi-junction solar cells. In this paper, we present the first on-wafer integration of InGaN/GaN solar cells with non-III-nitride (GaAs) solar cells.
ISBN:9781612842431
1612842437
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2011.5994525