Design of 2-stage medium power amplifier using 0.5 μm GaAs PHEMT for wireless LAN applications

• Published in: TENCON 2008 - 2008 IEEE Region 10 Conference pp. 1 - 5
• Main Authors: Rasmi, A., Marzuki, A., Ismail, M.A., Rahim, A.I.A., Yahya, M.R., Mat, A.F.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2008
• Subjects: 2-stage MPA; 5.8 GHz; GaAs PHEMT; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Resistors; Wireless LAN; Wireless LAN applications

This paper presents the design and fabrication of two-stage medium power amplifier (MPA) using 0.5 mum GaAs PHEMT technology for the wireless LAN applications. The die size of this amplifier is only 1.7 mm times 0.85 mm. At a supply voltage of 5.0 V and 5.8 GHz operating frequency, a 2-stage MPA ach...