Design of 2-stage medium power amplifier using 0.5 μm GaAs PHEMT for wireless LAN applications

This paper presents the design and fabrication of two-stage medium power amplifier (MPA) using 0.5 mum GaAs PHEMT technology for the wireless LAN applications. The die size of this amplifier is only 1.7 mm times 0.85 mm. At a supply voltage of 5.0 V and 5.8 GHz operating frequency, a 2-stage MPA ach...

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Published inTENCON 2008 - 2008 IEEE Region 10 Conference pp. 1 - 5
Main Authors Rasmi, A., Marzuki, A., Ismail, M.A., Rahim, A.I.A., Yahya, M.R., Mat, A.F.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2008
Subjects
2-stage MPA
5.8 GHz
GaAs PHEMT
Gain
Gallium arsenide
Impedance matching
PHEMTs
Power amplifiers
Power generation
Radio frequency
Radiofrequency amplifiers
Resistors
Wireless LAN
Wireless LAN applications
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Summary:This paper presents the design and fabrication of two-stage medium power amplifier (MPA) using 0.5 mum GaAs PHEMT technology for the wireless LAN applications. The die size of this amplifier is only 1.7 mm times 0.85 mm. At a supply voltage of 5.0 V and 5.8 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 16.39 dB, P1 dB of 20.18 dBm, power gain of 15.15 dB and the PAE of 25.29%.
ISBN:1424424089
9781424424085
ISSN:2159-3442
DOI:10.1109/TENCON.2008.4766538