Stress-enhanced chemical vapor deposited graphene NEMS RF resonators

In this work we present room-temperature measurements of graphene nanoelectromechanical resonators (GN-ERs) demonstrating quality factors (Qs) greater than 200 at resonance. A nominal resonant frequency (f o ) of 200 MHz is attained by applying strain to the suspended graphene using an SU-8 polymer...

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Bibliographic Details
Published in2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC) pp. 543 - 546
Main Authors Lekas, Michael, Sunwoo Lee, Changyao Chen, Cha, Wu-Joon, Ayyagari, Karthik, Hone, James, Shepard, Kenneth
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2013
Subjects
Clamps
Graphene
Logic gates
Pollution measurement
Radio frequency
Semiconductor device measurement
Strain
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Summary:In this work we present room-temperature measurements of graphene nanoelectromechanical resonators (GN-ERs) demonstrating quality factors (Qs) greater than 200 at resonance. A nominal resonant frequency (f o ) of 200 MHz is attained by applying strain to the suspended graphene using an SU-8 polymer clamp. Additionally, the device f o can be tuned by more than 5% by application of a DC gate bias on the order of 5V. Chemical vapor deposited (CVD) graphene is used to demonstrate the scalability of the process.
DOI:10.1109/EFTF-IFC.2013.6702216