Modeling of IGBTs with focus on voltage dependency of terminal capacitances

This paper presents a modeling of IGBTs with a focus on voltage dependency of capacitances between terminals of the IGBT. The proposed model is based on a physics-based IGBT model for circuit simulators to get accurate switching waveforms by taking account of the variable capacitances depending on t...

Full description

Saved in:
Bibliographic Details
Published inProceedings of the 2011 14th European Conference on Power Electronics and Applications pp. 1 - 9
Main Authors Tominaga, Shinji, Urushibata, Hiroaki, Fujita, Hideaki, Akagi, Hirofumi, Horiguchi, Takeshi, Kinouchi, Shin-ichi, Oi, Takeshi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2011
Subjects
Capacitance
Capacitors
Device modeling
IGBT
Insulated gate bipolar transistors
Integrated circuit modeling
Load modeling
Logic gates
Mathematical model
Simulation
Online AccessGet full text

Cover

More Information
Summary:This paper presents a modeling of IGBTs with a focus on voltage dependency of capacitances between terminals of the IGBT. The proposed model is based on a physics-based IGBT model for circuit simulators to get accurate switching waveforms by taking account of the variable capacitances depending on the voltage between the terminals of the IGBT model. The basic feature is that the simulation accuracy of switching waveforms can be improved by applying the measured capacitances to the capacitors between the terminals. The simulated results by using the proposed IGBT model are in good agreement with experimental results.
ISBN:9781612841670
1612841678