Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions

Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical...

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Published in2010 International Workshop on Junction Technology Extended Abstracts pp. 1 - 4
Main Authors Tsutsui, Kazuo, Hoshino, Norifumi, Nakagawa, Yasumasa, Tanaka, Masaoki, Nohira, Hiroshi, Kakushima, Kuniyuki, Ahemt, Parhat, Sasaki, Yuichiro, Mizuno, Bunji, Hattori, Takeo, Iwai, Hiroshi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Annealing
Atomic measurements
Bonding
Chemical analysis
Chemical technology
Crystallization
Etching
Hall effect
Impurities
Spectroscopy
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Summary:Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state is assined to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for each donor type impurity (As, P and Sb), however, these two states could not be necessarily correlated with the electrically activated and deactivated atoms.
ISBN:1424458668
9781424458660
DOI:10.1109/IWJT.2010.5474909