Electrolytic charge inversion at programmable CMOS sensor interfaces

Electrochemical interface layer overcharging is experimentally demonstrated at planar MOS sensor interfaces by controlling the surface charge through nonvolatile charge injection. The electric field across the solid-fluid interface is modulated upon floating-gate program/erase and leads to electroly...

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Bibliographic Details
Published in2011 16th International Solid-State Sensors, Actuators and Microsystems Conference pp. 2098 - 2101
Main Authors Jayant, K., Hartman, M. R., Phelps, J. B., Gordon, P. H., Luo, D., Pollack, L., Kan, E. C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Capacitance
Charge inversion
CMOS
DNA
double layer
Electric potential
Electrodes
floating gate
Logic gates
Sensors
Surface impedance
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Summary:Electrochemical interface layer overcharging is experimentally demonstrated at planar MOS sensor interfaces by controlling the surface charge through nonvolatile charge injection. The electric field across the solid-fluid interface is modulated upon floating-gate program/erase and leads to electrolytic charge reversal, for which an analytical model is derived. This electrofluidic gating effect is further used to repel adsorbed DNA, realizing an electrical surface refreshable biosensor. Quasi-static and impedimetric measurements are presented for validation.
ISBN:9781457701573
145770157X
ISSN:2159-547X
DOI:10.1109/TRANSDUCERS.2011.5969286